N° 03 : Experimental Exploration of TSEP Thermal Measurements for Training Predictive Models of Semiconductor Junction Temperature

IFP Energies nouvelles (IFPEN) est un acteur majeur de la recherche et de la formation dans les domaines de l’énergie, du transport et de l’environnement. De la recherche à l’industrie, l’innovation technologique est au cœur de son action, articulée autour de quatre priorités stratégiques : CLIMAT, ENVIRONNEMENT ET ÉCONOMIE CIRCULAIRE, ÉNERGIES RENOUVELABLES, MOBILITÉ DURABLE et HYDROCARBURES RESPONSABLES.

L’engagement d’IFPEN en faveur d’un mix énergétique durable se traduit par des actions visant :

• à gagner en efficacité énergétique ;
• à réduire les émissions de CO2 et de polluants ;
• à améliorer l’empreinte environnementale de l’industrie et des transports ;

tout en répondant à la demande mondiale en mobilité, en énergie et en produits pour la chimie.

Dans cet objectif, IFPEN développe des solutions permettant, d’une part, d’utiliser des sources d’énergie alternatives et, d’autre part, d’améliorer les technologies existantes liées à l’exploitation des énergies fossiles.

Experimental Exploration of TSEP Thermal Measurements for Training Predictive Models of Semiconductor Junction Temperature

In current power electronics (PE) applications, controlling the junction temperature (Tj) of semiconductor devices is crucial to ensure their reliability and durability. This temperature directly impacts the performance, stability, and lifetime of electronic devices, thereby influencing their energy efficiency. Beyond purely technical aspects, such control also contributes to a sustainable development approach: by improving the understanding and management of thermal constraints, it becomes possible to optimize component usage, reduce oversizing, and extend the lifetime of electrical systems. This leads to better resource utilization (e.g., semiconductor materials), reduced maintenance and replacement needs, and ultimately, a more responsible and sustainable use of new technologies.

To achieve this, the internship aims to explore an innovative method for estimating the junction temperature of Wide Band Gap (SiC and GaN) semiconductors by using thermo-sensitive electrical parameters (TSEPs). These indirect thermal measurements offer a significant advantage by avoiding physical access to the junction, which is often complex with traditional methods.

This internship continues previous work at IFPEN that investigated and proposed a measurement method for the V_GSTH parameter (threshold gate voltage), for which a dedicated measurement board was designed and validated through numerical simulations. In the first phase, the objective will be to design an experimental setup building on these earlier results. Subsequently, the experimental measurements obtained via TSEPs will be used to train a predictive model that will ultimately allow the estimation of the virtual junction temperature of semiconductors (Tvj).

Main objectives of the internship:

1. Extend a previous literature review on TSEP measurement methods.
2. Design and develop an experimental setup for dynamic TSEP measurement.
3. Experimentally validate the measurements and compare the results with simulations.
4. Develop and train a dynamic thermal model for junction temperature estimation using tools developed within the framework of a PhD thesis at IFPEN.

This internship may lead to a PhD project in a broader perspective, where thermal measurements will be leveraged to design virtual thermal sensors. These innovative tools will enable real-time monitoring and optimization of power converter operation for electric traction, thereby improving energy efficiency, extending system lifetime, and directly contributing to sustainable mobility objectives.

Candidate profile:

Engineering school or Master’s degree student with strong knowledge in electrical engineering, power electronics, and thermal modeling.

Desired technical skills :

• Knowledge of power electronics and semiconductor devices (SiC, GaN).
• Proficiency in simulation tools (Matlab/Simulink, LTSpice, etc.).
• Experience in electronic design and thermal modeling appreciated.

Personal quality :

• Curiosity and willingness to innovate.
• Dynamism and ability to work in a team. The intern will collaborate with PhD students in the field.
• Motivation for experimental validation and dissemination of results (scientific publications).

 Keywords: Power electronics, TSEP, SiC, GaN, junction temperature, thermal, modeling.